1n957b...1n963b vishay semiconductors rev. a3, 13-nov-98 1 (3) silicon zdiodes features very sharp reverse characteristic very high stability low reverse current level v z tolerance 5% applications voltage stabilization 94 9367 absolute maximum ratings t j = 25 c parameter test conditions type symbol value unit power dissipation t l 75 c p v 500 mw zcurrent i z p v /v z ma junction temperature t j 200 c storage temperature range t stg 65...+200 c maximum thermal resistance t j = 25 c parameter test conditions symbol value unit junction ambient l=9.5mm (3/8o), t l =constant r thja 300 k/w electrical characteristics t j = 25 c parameter test conditions type symbol min typ max unit forward voltage i f =200ma v f 1.1 v
1n957b...1n963b vishay semiconductors rev. a3, 13-nov-98 2 (3) type v znom 1) i zt for r zjt r zjk at i zk i r at v r tk vz v ma ma a max v %/k 1n957b 6.8 20 < 4.5 < 700 1.0 150 5.2 < 0.045 1n958b 7.5 20 < 5.5 < 700 0.5 75 5.7 < +0.050 1n959b 8.2 20 < 6.5 < 700 0.5 50 6.2 < +0.058 1n960b 9.1 20 < 7.5 < 700 0.5 25 6.9 < +0.062 1n961b 10 20 < 8.5 < 700 0.25 10 7.6 < +0.065 1n962b 11 20 < 9.5 < 700 0.25 5 8.4 < +0.068 1n963b 12 20 < 11.5 < 700 0.25 5 9.1 < +0.075 1.)based on dc measurement at thermal equilibrium; lead length = 9.5mm (3/8o); thermal resistance of heat sink = 30 k/w. dimensions in mm cathode identification j 1.7 max. j 0.55 max. 3.9 max. 26 min. technical drawings according to din specifications 94 9366 standard glass case 54 a 2 din 41880 jedec do 35 weight max. 0.3g 26 min.
1n957b...1n963b vishay semiconductors rev. a3, 13-nov-98 3 (3) ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol ( 1987) and its london amendments ( 1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay-semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay-semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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